By Luque A., Marti A., Nozik A.J.
Semiconductor quantum dots can be utilized in so - referred to as 3rd - new release sun cellsthat have the capability to drastically elevate the photon conversion potency through twoeffects: (1) the creation of mul tiple excitons from a unmarried photon of enough energyand (2) the formation of intermediate bands within the bandgap that use sub - bandgapphotons to shape separable electron-hole pairs. this can be attainable simply because quantization ofenergy degrees in quantum dots produces the next results: more advantageous Auger proc -esses and Coulomb coupling among cost vendors; removal of the requirement toconserve crystal momentum; slowed sizzling electron-hole pair (exciton) cooling; multipleexciton iteration; and forma tion of minibands (delocalized digital states) in quantumdot arrays. For exciton multi plication, very excessive quantum yields of 300-700% for excitonformation in PbSe, PbS, PbTe, and CdSe quantum dots were stated at photonenergies approximately 4-8 occasions the HOMO-LUMO transition power (quantum dot bandgap),respectively, indi cating the formation of 3-7 excitons/photon, based upon the photonenergy. For intermediate - band sunlight cells, quantum dots are used to create the intermediatebands from the con fined electron states within the conduction band. via theintermediate band, it's attainable to soak up lower than - bandgap power photons. This ispredicted to provide sunlight cells with more desirable photocurrent with out voltage degradation.